型号:max5891egk---td | 类别: | 制造商: |
封装: | 描述: |
max5891egk---td相关型号
- IDT71V3577S85PF
存储器
IDT, Integrated Device Technology Inc
100-LQFP
IC SRAM 4MBIT 85NS 100TQFP
- GRM43ER72A225KA01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 2.2UF 100V 10% X7R 1812
- GSOT12-HT3-GS08
TVS - 二极管
Vishay Semiconductor Opto Division
3-WDFN
DIODE ESD 1LINE 12V LLP75-3B
- G7L-2A-T-J-CB-DC48
功率,高于 2 安
Omron Electronics Inc-IA Div
RELAY GEN PURPOSE DPST 25A 48V
- IDT71V3577S85PFG8
存储器
IDT, Integrated Device Technology Inc
100-LQFP
IC SRAM 4MBIT 85NS 100TQFP
- G3JA-C416B AC/DC24
配件
Omron Electronics Inc-IA Div
STARTR 3PHASE HYBRD 200-480V 16A
- GSOT12-HT3-GS08
TVS - 二极管
Vishay Semiconductor Opto Division
3-WDFN
DIODE ESD 1LINE 12V LLP75-3B
- GRM43ER72A225KA01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 2.2UF 100V 10% X7R 1812
- G3JA-C416B AC/DC24
配件
Omron Electronics Inc-IA Div
STARTR 3PHASE HYBRD 200-480V 16A
- G7L-2A-TUB-80-CB DC48
功率,高于 2 安
Omron Electronics Inc-IA Div
RELAY GEN PURPOSE DPST 25A 48V
- IDT71V3577SA75BG8
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 75NS 119BGA
- GRM43ER72A225MA01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 2.2UF 100V 20% X7R 1812
- GSOT24C-GS08
TVS - 二极管
Vishay Semiconductor Opto Division
TO-236-3,SC-59,SOT-23-3
DIODE ESD 2LINE 24V SOT23
- G7L-2A-TUB-CB-DC48
功率,高于 2 安
Omron Electronics Inc-IA Div
RELAY GEN PURPOSE DPST 25A 48V
- IDT71V3577SA75BGG8
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 75NS 119BGA
- IDT71V3577SA75BGGI
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 75NS 119BGA
- G7L-2A-TUB-J-CB-DC100
功率,高于 2 安
Omron Electronics Inc-IA Div
RELAY GEN PURPOSE DPST 25A 100V
- GSOT24C-GS08
TVS - 二极管
Vishay Semiconductor Opto Division
TO-236-3,SC-59,SOT-23-3
DIODE ESD 2LINE 24V SOT23
- GRM43NR72A104KA01K
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.1UF 100V 10% X7R 1812
- IDT71V3577SA75BGGI8
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 75NS 119BGA
- GRM43NR72A104KA01K
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.1UF 100V 10% X7R 1812
- G7S-4A2B DC24
功率,高于 2 安
Omron Electronics Inc-EMC Div
RELAY SAFETY 6PST 6A 24V
- IDT71V3577SA75BQGI
存储器
IDT, Integrated Device Technology Inc
165-TBGA
IC SRAM 4MBIT 75NS 165FBGA
- GRM43QR72E154KW01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.15UF 250V 10% X7R 1812
- GSP1.7500.1
电源输入 - 输入端,输出端,模块
Schurter Inc
3-WDFN
GSP1 APPLIANCE INLET 10A 70
- G7SA-2A2B-DC24
功率,高于 2 安
Omron Electronics Inc-EMC Div
RELAY SAFETY 4PST 6A 24V
- G3JA-C416B AC100-240
配件
Omron Electronics Inc-IA Div
STARTR 3PHASE HYBRD 200-480V 16A
- IDT71V3577SA80BGGI8
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 80NS 119BGA
- GSP1.8103.1
电源输入 - 输入端,输出端,模块
Schurter Inc
3-WDFN
GSP1 APPLIANCE INLET 10A 70
- GRM43QR72J683KW01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.068UF 630V X7R 1812
- G7T-1012S DC24
配件
Omron Electronics Inc-IA Div
RELAY BLOCK 16POS 24VDC NPN
- GRM43QR72J683KW01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.068UF 630V X7R 1812
- GSP1.8113.1
电源输入 - 输入端,输出端,模块
Schurter Inc
3-WDFN
GSP1 APPLIANCE INLET 10A 70
- IDT71V3577SA85BGG
存储器
IDT, Integrated Device Technology Inc
119-BGA
IC SRAM 4MBIT 85NS 119BGA
- G7T-1112S-DC12V
配件
Omron Electronics Inc-IA Div
RELAY BLOCK 12VDC NPN
- GSP1.8211.1
电源输入 - 输入端,输出端,模块
Schurter Inc
3-WDFN
GSP1 APPLIANCE INLET 10A 70
- GRM43R5C2A682JD01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 6800PF 100V 5% NP0 1812
- IDT71V3577YS65PFG
存储器
IDT, Integrated Device Technology Inc
100-LQFP
IC SRAM 4MBIT 65NS 100TQFP
- G7T-1122S AC110/120
配件
Omron Electronics Inc-IA Div
RELAY BLOCK INPUT
- GRM43RF52A154ZA01L
陶瓷
Murata Electronics North America
1812(4532 公制)
CAP CER 0.15UF 100V Y5V 1812